摘要
在注入能量为１７０ｋｅＶ，注入剂量从０．６×１０１８／ｃｍ２到１．８×１０１８／ｃｍ２范围，改变注入方式，利用ＴＥＭ技术观察了形成ＳＩＭＯＸ的结构．注入剂量为０．６×１０１８／ｃｍ２时，可以获得连续的ＳｉＯ２埋层且顶部硅层基本上无穿通位错产生；注入剂量为１．５×１０１８／ｃｍ２时，采用双重注入可以获得质量很好的ＳＩＭＯＸ结构，顶部硅层仅有较少的穿通位错；注入剂量为１．８×１０１８／ｃｍ２时，三重注入可以获得质量好的ＳＩＭＯＸ结构，顶部硅层穿通位错稍多．
Abstract The structures of SIMOX wafer implanted at 170keV with doses of (0. 6￣1. 8)× 10,18/cm2 at 680℃ followed by annealing at 1300℃ and changed implanting manners .have been investigated by using cross-sectional Transmission Electron Microscopy. With dose 6 × 1017/cm2, a continuous buried oxide layer is formed by high temperature annealing at 1300℃ and the top Si layer hasn't basically shown any threading dislocation,with dose 1.5 × 1018/cm2 and 1. 8 × 1018/cm2 a good quality structures of SIMOX can be got by doubleimplantation and triple-implantation, respectively, but the threading dislocations can be found in the top SI layer.
关键词
SIMOX材料
TEM
半导体材料
Coatings
Ion implantation
Oxygen
Silica
Transmission electron microscopy
