GaAs／AlGaAs光子平行存贮器的性能

Characteristics of GaAs/AlGaAs Photonic Parallel Memory

本文报告用ＰｎｐＮ型ＧａＡｓ／ＡｌＧａＡｓ结构的光电双稳器件形成的光子平行存贮器单元器件和４×４阵列器件的特性．单元器件的最小维持功耗小于３０μＷ．使器件从“关闭”态翻转到“导通”态所需的光触发功率小于８０μＷ．单元面积１６０×１６０μｍ、间距４０μｍ的存贮器４×４原理性阵列已经研制成功，这是０．８５μｍ波长范围的光子平行存贮器的首次报道．

Abstract This paper reports the characteristics of cell and 4 × 4 array devices of PPM (Photonic Parallel Memory) formed by optoelectronic bistable devices with a type of GaAs/AlGaAs PnpN structure. An S-shape negative differential resistance region occurrs at the forward characteristic of the cell device. At the time the applied voltage is increased beyond the switch voltage the device is switched into the 'on' state. Infrared light is emitted from the top of the device in the 'on' state but not in the 'off' state. The minimum static holding power of a typical cell device is less than 30μW. After removing the input light, the bistable device is maintained in 'emissive' state till making supply voltage near zero. The input light power necessary to turn the device from 'off' to 'on' state is about 80μW. A 4× 4 principle array of PPM with a cell area of 160× 160 μm2 and a spacing between two neighboring cells of 40μm has been successfully fabricated. This is the first report on 2D PPM array in the wavelength range of 0. 85μm.