摘要
本文详细讨论了ＩｎＳｂ磁敏电阻器的导电机理，在文献［１］、［２］的基础上，提出了提高它的灵敏度的途径．本文首次研究了ＩｎＳｂ磁敏电阻器的可靠性，通过可靠性寿命试验，其失效率λ（ｔ）＜１×１０－５／ｈ．
Abstract The conduction mechanism of InSb magnetoresistor is discussed in detail. Based on the paperL[1,2], We have proposed a new way for improving its sensitivity. In this paper,we study the reliability of InSb magnetoresistor for the first fime. Its failure rate is<1 × 10-5/h obtained from the reliability lifetime test.
基金
国家"七
五"科技攻关资助
关键词
INSB
磁敏电阻器
导电机理
可靠性
电阻器
Magnetic semiconductors
Reliability
Resistors
Semiconducting antimony
Semiconducting indium compounds
