GaAs／GaAlAs中红外量子阱探测器和双色量子阱红外探测器

GaAs/GaAlAs Quantum Well Mid-Infrared (3￣5μm) Detectors and Two-Color (3￣μm and 8￣12μm) Infrared Detectors

本文报道我们在国内率先研制的ＧａＡｓ／ＧａＡｌＡｓ中红外（３～５μｍ）量子阱探测器和双色量子阱红外探测器的制备和性能．ＧａＡｓ／ＧａＡｌＡｓ中红外量子阱探测器是光伏型，探测峰值波长为５．３μｍ，８５Ｋ下的５００Ｋ黑体探测率为３．０×１０９ｃｍ·Ｈｚ１／２／Ｗ，峰值探测率达到５×１０１１ｃｍ·Ｈｚ１／２／Ｗ，阻抗为５０ＭΩ．ＧａＡｓ／ＧａＡｌＡｓ双色量子阱红外探测器是偏压控制型的两端器件，在零偏压下该探测器仅在３～５μｍ波段有响应，响应峰值波长为５．３μｍ，８５Ｋ温度下５００Ｋ黑体探测率为３．０×１０９ｃｍ·Ｈｚ１／２／Ｗ，当偏压为２Ｖ时，该探测器的响应切换到８～１２μｍ波段，峰值响应波长为９．０μｍ，８５Ｋ温度下的黑体探测率为１．０×１０９ｃｍ·Ｈｚ１／２／Ｗ．

Abstract We have fabricated GaAs/GaAIAs quantum well mid-infrared (3￣5μm) detectors and GaAs/GaAIAs quantum well two-color (3￣5μm and 8￣μm) infrared detectors in China. GaAs/GaAIAs quantum well mid-infrared (3￣5μm)detectors are photovoltaic,and their black-body detectivity (Dbb )at 85K is 3. 0 × 109cm. Hz1/2/W. GaAs/GaA)IAs quantum well two-color (3￣5μm and 8￣12μm)infrared detectors are two terminal biascontrolled devices, and their photoregponse at zero bias is only within 3￣5μm while the photoresponse at a bias of 2. 0 V is only within 8-12μm.