摘要
提出一种新的基于硫化物表面处理的InP/GaAs低温晶片键合技术.在360℃的退火温度下,获得了1.2MPa的键合强度.基于这种低温键合技术,可将外延生长在InP衬底上的In0.53Ga0.47As/InP多量子阱(MQW)键合并转移到GaAs衬底上.X射线衍射表明量子阱的结构未受键合过程的影响.光致发光谱分析表明键合后量子阱的晶体质量略有改善.电流电压特性的测试表明n-InP/n-InP的键合界面具有良好的导电特性;在n-InP/n-GaAs的键合界面存在着电荷势垒,这主要是由于键合界面存在GaAs氧化物薄层所致.
A new approach for InP/GaAs wafer bonding based on sulfur passivation is presented. High bonding strength is obtained by annealing at 360℃. An In0. 53Ga0.47 As/InP MQW layer grown on InP is transferred onto a GaAs substrate via the new bonding process. X-ray diffraction reveals that structure integrity of the bonded MQW is preserved. Photoluminescence measurements indicate a slight improvement in crystal quality for the bonded MQW layers. Current-voltage measurements demonstrate the conductivity of the bonded interface.
基金
国家自然科学基金重大项目(批准号:90201035)
国家高技术研究发展计划(批准号:2003AA312020)
国家重点基础研究发展计划(批准号:2003CB314902)资助项目~~
