基于元胞自动机理论的硅各向异性腐蚀模型

Cellular-Automata-Based Modeling of Silicon Anisotropic Etching

根据硅各向异性腐蚀在微观尺度下的特点,基于元胞自动机理论提出了新的腐蚀模拟模型.该模型考虑了腐蚀过程中硅不同晶面的晶体结构特点,并通过引入碰撞理论,综合反映了腐蚀温度和浓度对腐蚀的影响作用.该模型可快速准确地模拟分析各向异性腐蚀工艺过程,对优化工艺有着理论指导作用.

Based on the theory of cellular automata, a novel simulation model is proposed to describe the characteristics of silicon anisotropic etching. The influence of silicon crystal structure in different planes during the etching process are considered. Moreover, the collision theory is also introduced into this model, taking many factors into account, such as etching temperature, etchant concentration,and effective particle concentration. With this model, the simulation and analysis of the silicon anisotropic etching process could be carried out rapidly and accurately, which would theoretically direct how best to optimize the processes.