硼掺杂对金刚石薄膜生长特性的影响

Effects of Boron Doping on the Growth Characteristic of Diamond Film

采用HFCVD方法制备了掺硼金刚石薄膜,通过扫描电子显微镜和X射线衍射光谱对样品的表面形貌及结构进行了分析.结果表明,随着硼含量的增加,薄膜中晶粒的取向由(100)变为(111),然后趋向于无序化.硼的掺入同样影响到孪晶晶粒的形态及生长因子α,使得α变小.通过对样品的Raman光谱分析,得出在适当的硼掺杂浓度下,孪晶的出现使金刚石薄膜中的应力得到松弛,从而中心声子线Raman位移红移较小.

Boron-doped diamond thin films, synthesized by the HFCVD method, were analyzed by SEM and XRD. The results show that, when the boron concentration in the films increases, the crystallite orientation changes from （100） to （111）, then tends to disorder. The doping of boron reduces the growth parameter α. The stress in the films is relaxed by twin crystals in the boron doping films. Consequently the shift of center phonon line of Raman spectrum becomes smaller.