摘要
柱状生长的CVD金刚石膜生长面非常粗糙,并且粗糙度随着膜厚的增加而增加,限制了它的应用,必须对其抛光.本文采用了机械研磨法来研磨CVD金刚石厚膜,研磨速率达6.1μm/h,厚度去除了36.9μm,粗糙度Ra从5.9μm降至0.19μm.
The columnar growth of CVD diamond results in a very rough growth surface and the surface roughness steepness increases with film thickness, which can adversely limit their application, it is important to polish them. In the paper, mechanical lapping was used for lapping thick CVD diamond and the lapping rate was 6. 1 μm/h, thickness of 36.9 μm was removed from top surface, the mean surface roughness Ra was reduced from 5.9 μm to 0.19 μm.
出处
《武汉化工学院学报》
2005年第5期39-41,共3页
Journal of Wuhan Institute of Chemical Technology
关键词
金刚石膜
化学气相沉积
机械研磨
diamond film
chemical vapor deposition
mechanical lapping