量子阱GaAs太阳电池性能随质子辐照注量的变化

PERFORMANCE DEGRADATION OF MULTI-QUANTUM WELL GaAs SOLAR CELLS AS A FUNCTION OF PROTON IRRADIATION FLUENCE 1×10~9 cm^-2 TO 2×10^(13) cm^(-2)

2MeV,1×109~2×1013cm-2质子辐照量子阱GaAs太阳电池,用I-V特性和光谱响应测试分析辐射效应.研究表明,随辐照注量增大,电池Isc,Voc,Pmax衰降程度增大,相同的注量,Pmax衰降程度最大.当辐照注量大于3×1012cm-2时,电池Isc衰降程度比Voc的大,当注量小于3×1012cm-2时,电池Voc衰降程度比Isc的大,与量子阱结构受到损失有关.在整个波长范围,随辐照注量增加,相对光谱响应的衰降变化增大,在900~1000nm波长范围,2×1013cm-2质子辐照电池使量子阱光谱响应特性消失.

The performance degradation of multi-quantum well （MQW） GaAs solar cells is studied. The cell material is InGaAs/GaAsP grown on GaAs substrates. The fluence of 2 MeV proton irradiation varies from 1 ×10^9 cm^-2 to 2 × 10^13 cm^-2. The results show that the degradation rate of short circuit current （Isc）, open circuit voltage （Voc） and maximum power output （Pmax） increases as the irradiation fluence increases; the degradation of Isc is faster than that of Voc for the fluence above 3×10^12 cm^-2 ; but the change of Voc is faster than that of Isc for the fluence below 3× 10^12 cm^-2 due to the quantum well structure damage; and the spectral response of MQW GaAs solar cells obviously decreases in whole wavelength as the irradiation fluence increases and the quantum well spectral response disappears in the wavelength 0. 9-1.0μm after a 2×10^13 cm^-2 proton irradiation.