摘要
采用四探针电阻率测试仪和傅立叶红外光谱测试仪,研究了铸造多晶硅中热施主的形成规律。实验发 现,初始氧浓度高、位错密度高、碳含量低的样品中,所形成的热施主浓度较高。这表明:碳对热施主的形成 有抑制作用;位错对热施主的形成有促进作用;晶界对热施主的形成没有明显地影响,而且碳和初始氧浓度的 影响最大。实验还发现,在650℃0．5h退火处理可以消除部分原生热施主,原生热施主对于随后的热施主的形 成规律没有明显影响。
The formation behavior of thermal donors （TD） in cast multicrystalline silicon was investigated by the means of four-probe resistivity measurement and Fourier transmission infrared spectroscopy （FTIR）. High concentration of TD formed in the specimens with high concentration of oxygen, and high density of dislocation and low concentration of carbon were found. The results indicated that dislocations enhance the formation of TD and grain boundaries hardly influence it, while carbon noticeably restrains TD formation. It was also found that the pre-annealing at 650℃ for 30 minutes could effectively eliminate the as-grown TD, but couldn＇t affect the subsequent TD formation.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2005年第4期581-584,共4页
Acta Energiae Solaris Sinica
基金
国家自然基金项目(50032010)云南省省院省校科技合作专项经费资助项目
关键词
铸造多晶硅
氧
热施主
cast multicrystalline silicon
oxygen
thermal donor
