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Effects of ZnO Buffer Layer Thickness on Properties of Mg_xZn_(1-x)O Thin Films Deposited by MOCVD 被引量:1

Effects of ZnO Buffer Layer Thickness on Properties of Mg_xZn_(1-x)O Thin Films Deposited by MOCVD
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摘要 High-quality MgxZn1-xO thin films were grown on sapphire(0001 ) substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface. High-quality MgxZn1-xO thin films were grown on sapphire(0001 ) substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.
出处 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2005年第5期583-586,共4页 高等学校化学研究(英文版)
基金 Supported by the 863 Project(No.2001AA311130).
关键词 MGXZN1-XO ZnO Buffer layer Sapphire substrate MOCVD AFM MgxZn1-xO, ZnO Buffer layer, Sapphire substrate, MOCVD, AFM
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