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Spectra Analysis of a Novel Ti-Doped LiAlO2 Single Crystal 被引量:5

Spectra Analysis of a Novel Ti-Doped LiAlO2 Single Crystal
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摘要 LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti: LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively: The peaks at 716nm and 798nm may stem from the VLi^+ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4+-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals. LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti: LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively: The peaks at 716nm and 798nm may stem from the VLi^+ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4+-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第10期2622-2625,共4页 中国物理快报(英文版)
关键词 M-PLANE GAN(1(1)OVER-BAR-00) NITRIDE SEMICONDUCTORS FREE ELECTROSTATICFIELDS GAN FILMS GROWTH GAMMA-LIALO2(100) DEPOSITION ALUMINATE LIGAO2 M-PLANE GAN(1(1)OVER-BAR-00) NITRIDE SEMICONDUCTORS FREE ELECTROSTATICFIELDS GAN FILMS GROWTH GAMMA-LIALO2(100) DEPOSITION ALUMINATE LIGAO2
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