摘要
研究了具有不同阱宽的ＧａＡｓ／ＡｌＧａＡｓ和ＩｎＧａＡｓ／ＡｌＧａＡｓ窄量子阱结构中激子线宽与温度的关系，发现在低温范围内，声学声子的线性散射系数随着阱宽的减小而增加。
Temperature dependence of exciton linewidths in GaAs/AlGaAs and InGaAs/AlGaAs quantum wells with very narrow well widths was investigated.The increase of the acoustic phonon linear scattering coefficient was found with decreasing well width in low temperature range.The experimental results were discussed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第4期291-296,共6页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金
关键词
激子线宽
声学声子散射
半导体
量子阱
exciton linewidth,acoustic phonon scattering,semiconductor quantum well.
