GaAs和ZnSe中极化子的压力效应

Pressure Effect on Polarons in GaAs and ZnSe

考虑电子发射和吸收多个虚声子对极化子的影响,计入压力效应,采用改进的线性组合算符法讨论极性晶体中的Ⅲ～Ⅴ族GaAs和Ⅱ～Ⅵ族ZnSe极化子的性质.在中间耦合极限下,数值计算得到了这两种极化子的耦合常数、自陷能、有效质量和围绕电子的平均虚声子数随外加压力的变化关系.结果表明:压力对Ⅱ～Ⅵ族材料的影响比较大.

An improved linear combination operator method is used to investigate the properties of polarons in polar crystal Ⅲ-Ⅴ compound GaAs and Ⅱ-Ⅵ compound ZnSe by considering the pressure effect on electrons emitting or absorbing many virtual phonons. The relations among the electron-phonon interaction coupling constant, self-trapping energy, effective mass, average number of virtual phonons around an electron and pressure are obtained numerically for the two kinds of materials respectively. It is found that the pressure effect is relatively obvious for Ⅰ - Ⅵcompound materials.