硅基GaAs／GaAlAs平面光波导的研究

INVESTIGATION OF Si BASED GaAs/GaAlAs PLANAR OPTICAL WAVEGUIDE

分析了金属有机化合物化学气相淀积（ＭＯＣＶＤ）ＧａＡｓ／ＧａＡｓＡｌ／ＧａＡｓ／Ｓｉ材料结构的性能，用ＭＯＣＶＤ法在硅衬底上生长了ＧａＡｓ／ＧａＡｓＡｌ／ＧａＡｓ材料，并用这种材料制备了平面光波导样品，测出１．３μｍ单模激光的传输损耗小于０．６５ｄＢ／ｃｍ．

The structure characteristics of MOCVD GaAs/GaAlAs/GaAs/Si were analyzed.Some planar optical waveguides samples were fabricated with the structure of GaAs/GaAlAs/GaAs grown on Si substrates by MOCVD.The single mode propagation losses of the planar optical waveguides were measured and they are less than 0.65 dB/cm at the wavelength of 1.3μm.