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掺硼金刚石薄膜的电化学性能 被引量:10

Electrochemical properties of boron-doped diamond thin-film
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摘要 利用循环伏安法,通过对比掺硼金刚石薄膜电极和铂/金刚石电极分别作为工作电极时的循环伏安曲线,分析了两种电极表现出的电化学性能差别,并利用能级理论进行了机理探讨。结果表明掺硼金刚石薄膜电极具有宽的电化学窗口(宽度约为3V)、良好的化学稳定性和极低的背景电流(接近0),是一种较有潜力的电化学电极材料。 By cyclic vohammetry, electrochemical properties of the boron-doped diamond thin-film electrode were investigated compared with those of Pt/BDD electrode. It shows that the boron-doped diamond thin-film electrode has wide electrochemical window (approximate 3V), excellent chemical sta- bility and low background current (near zero ). At the same time, the result was analyzed with energy level theory. All the works show that the boron-doped diamond thin film is a kind of ideal potential electrode.
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2005年第3期295-298,共4页 Journal of Functional Materials and Devices
基金 上海科委项目(No.0123nm023)
关键词 掺硼金刚石薄膜电极 铂/金刚石电极 电化学性能 循环伏安法 boron-doped diamond thin-film electrode Pt/BDD electrode electrochemical properties cyclic vohammetry
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参考文献8

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