不同衬底上LaN iO_3导电氧化物薄膜的制备和研究

Preparation and study of conductive LaNiO_3 thin films on different substrates

通过MOD法和快速热处理过程,在Si(100)和Pt(111)/Ti/SiO2/Si衬底上制备了LaN iO3(LNO)导电氧化物薄膜。经XRD结构分析表明,所制备的LNO薄膜具有纯的钙钛矿结构,并且以(100)方向择优取向。经SEM和AFM分析表明,LNO薄膜具有表面均匀、无裂纹。经标准四探针法测试表明,LNO薄膜具有好的金属特性,其室温电阻率为7.6×10-4Ω.cm。铁电性能测试表明,LNO薄膜可以提高PZT铁电薄膜的剩余极化强度。

LaNiO3 thin films were deposited on Si （100） and Pt（ 111 ）/Ti/SiO2/Si substrates by modified metalorganic decomposition technique（MOD） and rapid thermal annealing method. The structures of the films were characterized by X-ray diffraction （XRD）. XRD analysis show that the LaNiO3 thin films on Si （100） and Pt（ 111 ）/Ti/SiO2/Si substrates have single-phase perovskite-type structure and highly （100）-oriented. Scanning electron microscope （SEM） and atom force microscopy （AFM） images show the LaNiO3 films with uniform and crack-free surfaces. The resisitivity versus temperature curves of the LaNiO3 films show that the films have good metallic characteristic. The resistivity of the LaNiO3 films is 7.8×10^-4Ω . cm at room temperature. The hysteresis loops show that LNO thin films can increase the remnant polarization of PZT thin films.