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基于正交试验分析的阳极键合强度研究(英文) 被引量:3

Research on anodic bonding process using taguchimethod for maximum tensile strength
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摘要 采用抗拉强度作为键合质量评价的指标,对硅-玻璃阳极键合的键合温度、冷却速度、退火温度和时间等四个参数的三个位级下的键合效果进行了分析。通过采用正交试验分析法,将81组试验减少为9组并进行了试验。采用自制的抗拉强度测试机对强度进行了测试,结果发现,阳极键合后的冷却速度对强度的影响最为显著,冷却速度越低,强度越高。最后对断裂面进行了SEM分析并对试验结果进行了讨论。 Anodic bonding quality was quantitatively evaluated in terms of tensile strength. The strength of anodically bonded silicon-glass samples was investigated for 81 different bonding conditions, three conditions for each of the four parameters, including bonding temperature, cooling rate, annealing temperature and annealing time. Taguchi method was used to reduce the number of experiments required for the bonding quality evaluation, thus resulting in 9 experiment cases out of 81 possible cases. Fracture strength was measured with an in-house tensile testing machine. The influence of bonding process conditions on the tensile strength was quantified and discussed. It is found that the cooling rate after bonding is the most dominant factor influencing the anodic bonding strength and low cooling rate after bonding will result in high strength. Some ruptured interfaces after tensile testing are analyzed by SEM and the failure mechanisms are discussed.
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2005年第3期381-385,共5页 Journal of Functional Materials and Devices
基金 High Technology Program of Ministry of Science and Technology of China(No.2002AA404430)
关键词 阳极键合 圆片键合 微机电系统(MEMS) 强度 正交试验法 anodic bonding wafer bonding MEMS strength taguchi method
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