SiC功率器件与电路中的栅介质技术

Gate dielectric technology of SiC power devices and circuits

目前,宽带隙半导体材料SiC在功率MOS器件与电路方面的巨大优势一直没有很好地体现出来,这主要是受到SiC衬底上栅介质绝缘层的质量及界面特性方面的限制。本文在总结比较国际该领域研究现状的基础上,分析了碳元素的存在对介质层质量和界面态密度的影响,指出通过低温沉积氧化层以获得良好的界面质量,并通过高k介质的引入以提高介质层可靠性是今后SiC功率器件与电路研制中比较理想的栅介质制备技术。

Due to the restriction of gate dielectrics quality and interface characteristics of insulators on SiC substrates, potential of the wide-band-gap semiconductor material in high-power application field has still not been realized. Major progresses on this research project are summarized, at the same time, affects of C atoms on the quality and interface state density in thermal SiO2/SiC system are discussed. A potential method for SiC MOS devices and circuits is proposed to improve the performance and reliability.