a－S1∶H　CCD的转移特性分析

THE TRANSFER CIIARACTERISTICS ANALYSIS OF a-Si: H CCD

本文从ａ—Ｓｉ∶Ｈ的材料特性出发，采用更为精确的ａ—Ｓｉ∶Ｈ带隙态分布模型计算了ａ—Ｓｉ∶ＨＣＣＤ的转移特性，得出了ａ—Ｓｉ∶Ｈ材料参数对ａ—Ｓｉ∶ＨＣＣＤ的动态特性影响的数值分析结果．理论结果表明，ａ—Ｓｉ∶Ｈ材料带隙中的局域态分布对ａ—Ｓｉ∶ＨＣＣＤ的转移特性有非常大的影响．而且在高频下，ａ－Ｓｉ∶Ｈ中的带尾态对ａ—Ｓｉ∶ＨＣＣＤ转移特性的影响比深局域态要大．

In the paper, a more precise distribution of DOS (density of states) was used to analyze the transfer characteristics of a-Si : H CCD. The DOS includes the tail states distribution and the deep states distribution. The numerical results show that the distribution of DOS has a great effect on the transfer characteristics of a-Si:H CCD, and tinder high frequencies the tail states is more important than the deep states.