摘要
用直流磁控溅射法制备了Fe1-xBx薄膜。用谐振腔点频测试其微波磁损耗。测试结果和理论计算基本相符。研究了薄膜的制备工艺、组分、厚度、各向异性场、饱和磁化强度和阻尼系数等对微波磁损耗的影响。发现增大薄膜的各向异性场或饱和磁化强度、适当增大阻尼系数对提高磁损耗和展宽共振峰频带有益,而且阻尼系数的微小变化将对磁损耗值产生重要作用。试验也表明制备工艺、薄膜组分、厚度对磁损耗具有重要影响。
A series of Fe1-xBx nanometer films are prepared by the direct current sputtering, Resonant chamber pertubation method is used to measure the microwave magnetic loss of thin films. The results corresponds to the theoretical calculation. The effect of the anisotropy field, saturation intensity and damp coefficient, the component, thickness and the technological conditions of magnetic thin film on the microwave magnetic loss is investigated. It is found that the increase of the anisotropy magnetic field or saturation intensity of thin film and damping coefficient is beneficial to broaden the formant frequency band. The small variety of the damping coefficient will largely work on the value of magnetic loss. The experiment also indicates that the component, thickness and the technological conditions of magnetic thin film greatly affect the magnetic loss.
出处
《兵器材料科学与工程》
CAS
CSCD
北大核心
2005年第5期26-30,共5页
Ordnance Material Science and Engineering
基金
国防973项目资助
关键词
纳米薄膜
微波参数
磁损耗
nanometer thin film
microwave
magnetic loss