摘要
对GexSi(1-x)/Si应变超晶格雪崩光电探测器进行了分析与优化设计。优化结构为:i-Si雪崩区厚是1.8~2μm;p-Si区的掺杂浓度是1018cm-3,厚为17nm;超晶格总厚为340um。它可探测1.3~1.6μm的红外光。
The GexSi(1-x)/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed. Its optimum structure parameters are: the thickness of i-Si avalanehe region is 1. 8~2 μm; the carrier concentration of p-Si region is 1018 cm-3 and thickness is 17 nm; the total thickness of superlattices is 340 nm. The detector can be operated in the range of 1. 3~ 1. 6 μm.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1996年第6期839-843,共5页
Acta Optica Sinica
关键词
应变超晶格
雪崩
光电探测器
锗硅/硅
GeSi, strained-layer superlattice, avalanche photodetector(APD)