GaSb衬底上外延InAs_xSb_(1-x)材料的LP-MOCVD研究

The Study of InAs_xSb_(1-x) on GaSb Substrate Grown by LP-MOCVD

采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在(100)面GaSb单晶衬底上外延生长了InAsSb材料.用X射线双晶衍射、光学显微镜和扫描电镜、电子探针能谱仪等对材料特性进行了表征,分析研究了生长温度、Ⅴ/Ⅲ比、过渡层等对外延层的影响.并且获得了与GaSb衬底晶格失配度较低的表面光亮的晶体质量较好的InAsSb外延层.

InAsSb epitaxy had been obtained on （100） GaSb substrate by a home-made low pressure MOCVD system. The characteristic of InAsSb epitaxy was investigated by means of x-ray diffraction technique,optical microscopy and scanning electron microscopy（SEM）, and electron microprobe analysis （SEM）. And the dependence of surface morphology and solid composition of epitaxy on growth temperature, Ⅴ/Ⅲ ratio and buffer layer is studied. High quality mirror-like surfaces with a minimum lattice mismatch was obtained.