辐照对MOS结构氧化硅薄膜可靠性的影响

Influence of Irradiation on Oxide Film Reliability in MOS Structure

研究了经γ射线辐照后MOS结构的SiO2薄膜中可动离子的能量状态和数量变化。结果表明,辐照后SiO2膜中可动离子的最可机陷阱能量下降,离子总量大大减少。利用内建场增强离子发射模型和可动离子中性化模型对实验结果进行了分析与计算,理论与实验吻合较好。

The paper studied that the energy states and amount of mobile ions in SiO2 film of MOS structure undergone γ-rays irradiation. The research show that the most probable energy of mobile ions trapped in film decreases and the amount of mobile ions greatly reduces too. Experimental results were analyzed by means of built-in field enhanced ion emission model and ion neutralized models, which coincides well with the experiment results.