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MOCVD生长铁电氧化物薄膜MO源研究进展 被引量:1

Advances in Research of Metallorganic Precursors for Ferroelectric Oxide Thin Films via MOCVD
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摘要 高性能铁电氧化物薄膜是当今功能材料的研究热点之一。随着新型MO源的不断研究与开发,利用MOCVD技术制备高质量铁电薄膜材料得到了快速的发展。本文在分析金属醇盐和金属β二酮化合物等MO源的结构与其物性依赖关系基础上,分类综述了近年来在用于MOCVD方法生长铁电氧化物薄膜的新型MO源研究和开发方面的发展动态与趋势,为MOCVD方法制备铁电薄膜材料MO源的选择提供有用的参考与借鉴。 Ferroelectric thin films as the highly functional materials are nowadays become one of the research hotspots. With the steady research and development of novel metallorganic precursors, the MOCVD film fabrication technique for ferroeleetrie thin films has experienced a rapid development in recent years. In this paper through analyzing the close relationships underlying the structure and physieoehemieal properties of metallorganies such as metal-alkoxides, metal β-diketonates, etc., the latest advances in the research of metallorganie precursors for ferroeleetrie oxide thin films via MOCVD and their developing tendency are reviewed in an attempt of providing valuable references to proper metallorganie precursors for better ferroelectrie oxide thin films by MOCVD.
出处 《化学进展》 SCIE CAS CSCD 北大核心 2005年第5期839-846,共8页 Progress in Chemistry
关键词 铁电薄膜 MOCVD MO源 ferroelectric thin films MOCVD metallorganic precursors
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参考文献50

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共引文献23

同被引文献22

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