场效应纳电子晶体管的构造和电学特性测量

Design of Field-Effect Nano-Transistors and Measurement of Their Electrical Property

研究了场效应纳电子晶体管构造过程中金属电极的结构设计,源漏电极高度、SiO2绝缘层厚度以及金属电极选材等因素对器件性能有关键的影响。在此基础上测量了单壁碳纳米管束的场效应行为,构造成功基于单壁碳纳米管束的场效应晶体管。

Structure design of metal nano-electrode for nano-electronic device is investigated. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the SiO2 insulation layer and the materials of the nano-electrode play important roles in the electrical property of the nano electronic device. A single-walled carbon nanotubes bundle based on field-effect transistor is fabricated accordingly, and its I-V characteristic is measured.