大气压等离子体制备类二氧化硅薄膜的实验研究

Growth of SiO_x Films by Dielectric Barrier Discharge(DBD) Plasma Enhanced Chemical Vapor Deposition at Atmospheric Pressure

本文利用六甲基二硅氧烷(HMDSO)作为硅的先驱粒子,氮或氩气为稀释气体,进行了大气压等离子体化学气相沉积类二氧化硅薄膜的实验研究。运用红外光谱(FTIR)、光电子能谱(XPS)和扫描电镜(SEM)对沉积的薄膜进行结构和表面分析。实验表明,当功率一定时,在低的HMDSO含量下,硅衬底上得到了一层平整、致密、连续的薄膜沉积。红外吸收谱分析呈现出明显的Si-O-Si吸收峰,表明了类二氧化硅结构,其中的[Si]/[O]含量比达到1∶1.56。当HMDSO含量增加时,薄膜中含碳键成分增加,薄膜表面的大颗粒增多。相对地氮气而言,氩气在大气压下更容易获得稳定均匀的等离子体和更大的生长速率/功率比。

SiOx films were grown on Si substrates by dielectric barrier discharge（DBD） plasma-enhanced-chemical-vapor-deposition（PECVD） with hexamethyl-disiloxane（HMDSO） diluted by nitrogen and/or argon as source gases. The films were characterized with Fourier transform infra-red（ FFIR）, X-my photoelectron spectroscopy （XPS） and scanning electron microscopy （SEAM）. The results show that smooth, compact, and continuous SiO, films can grow on Si substrate at an appropriate power and fairly low HMDSO content. Pronounced absorption peak in FTIR spectra confirms the silica structure,and the [Si]/[O] content ratio is estimated to be 1：1.56.As HMDSO content rises,the density of carbon bond increases and more larger grains can be observed. Atmospheric pressure argon can do a better job than nitrogen in generating a uniform, stable plasma and in obtaining a high deposition ratio to power.