粒状氮化镓微晶的合成及其结构性能的研究

Study on Synthesis of Grainy GaN Powders and Their Structural Properties

在950℃的氮化温度下,通过单氢氧化镓(GaO2H)粉末与流动的NH3反应35min制备出粒状GaN微晶。通过X射线衍射(XRD)和扫描电镜(SEM)研究发现,GaN粉末是六角纤锌矿结构的粒状微晶,其晶格常数a和c分别为0.3191nm和0.5192nm。X射线光电子能谱(XPS)揭示试样中有Ga-N键形成,Ga与N两元素比为1∶1。

Grainy gallium nitride（GaN） powders have been synthesized by nitriding GaO2H powders in the flow of NH3 gas at a nitridation temperature of 950℃ for 35 min. Measurement results by XRD and SEM indicate that the synthesized GaN is of a single-phase hexagonl wurtzite structure with lattice constants of a=0.3191 nm and c=0.5192 nm, and the surface outline of GaN powder is grainy. XPS confirms the formation of bonding between Ga and N, and the surface stoichiometry of Ga：N is 1：1.