摘要
采用柠檬酸、乙二醇、硝酸铈和四氯化锡作为原料,通过改进的聚合物前驱法成功制备了大量均匀的铈掺杂SnO,纳米带。用X衍射法和扫描电镜对产物进行了表征。研究结果表明,Ce能有效地控制SnO2纳米带的生长,并且对SnO2纳米带的形貌和振动特性有重要的影响。
Ce-doped Tin dioxide （SnO2） nanobelts were successfully synthesized in bulk quantity based on a modified polymeric precursor （MPP） route using citric acid, ethulene glycol, Ce （NO3）·6H2O, and SnCl4·5H2O as source materials. The products were characterized by XRD analysis, andSEM. The results show that Ce can effectively control the growth of SnO2 nanobelts and have a significant influence on the morphology and vibration properties of SnO2 nanobelts.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第10期46-48,共3页
Semiconductor Technology
