用DBD-PECVD方法合成碳纳米管

Synthesis of Carbon Nanotubes Using Dielectric Barrier Discharge Plasma Enhanced Chemical Vapor Deposition

在大气压、较低温度下合成碳纳米管(CNTs),对于大规模的工业生产具有重要的意义。本文介绍了一种介质阻挡放电等离子体增强化学气相沉积(DBDPECVD)的方法,并利用该方法制备碳纳米管。实验是在约0.5个大气压、700℃下,通入氢气和甲烷的混合气体(CH4/H2为1∶10～1∶20),产生DBD等离子体;衬底为硅片;催化剂是用磁控溅射制备的Ni/Al薄膜,厚度分别为3nm和10nm。在扫描电镜下观察发现,碳纳米管的生长符合底端生长模式。在透射电镜下观察,碳纳米管没有竹节状结构。拉曼光谱分析表明,这种碳纳米管的结构缺陷比较多。

Large-scale carbon nanotube（CNT） films have been successfully grown for industrial application on silicon wafer by dielectric barrier discharge plasma enhanced chemical vapor deposition（DBD-PECVD） at atmospheric pressure and lather low temperature. The CNT films were characterized with Raman spectroscopy, scanning electron microscopy（SEM） and transmission electron microscopy（TEM）. The results show that the nanotubes have high density of structural defects, but showing no bamboo-knot shaped defects.