功率密度对中频磁控溅射制备的氧化锌镓薄膜性能的影响

Influence of Target Power Density on Ga-Doped ZnO Thin Films Prepared by Middle-Frequency Alternative Magnetron Sputtering

利用中频磁控溅射方法,溅射Ga2O3含量为6.7wt%的氧化锌镓陶瓷靶材,在低温下(约40℃)制备了ZGO薄膜。考察了溅射功率密度对ZGO薄膜的晶体结构、电学和光学性能的影响。结果表明:溅射功率密度对薄膜的结构、红外反射以及导电性能有较大影响。当溅射功率密度为3.58W/cm2,氩气压力为0.8Pa时,薄膜的电阻率低达1.5×10-3Ω·cm,方块电阻为23Ω时,可见光(λ=400nm～800nm)平均透过率高于90%。

Ca-doped ZnO （ZGO） thin films have been prepared by middle-frequency alternative magnetron sputtering at low substrate tomperature （about 40℃） with sputtering ceramic target containing ZnO and 6.7wt% Ga2O3. Influence of target power density on the microstructures, optical and electrical properties of ZGO films have been studied. The results show that ;target power density strongly affect the Microstructures,infrared reflection and electrical conductive properties of ZGO thin films. Under the deposition conditions of 3.58W/cm^2 sputtering power density and 0.8Pa sputtering gas pressure,ZGO thin films with the best comprehensive performances can be obtained,i.e, its resistivity is as low as 1.5×10^-3Ω·cm,its sheet resistance of 23Ω,and an average visible transmittance （from 400 to 800 nm） higher than 90%.