烷基化多孔硅的制备与表征

Preparation and Characterization of Luminescent Alkylated Porous Silicon

以p型单晶硅作为研究对象,采用电化学阳极氧化方法制备新鲜多孔硅以及与十二碳烯进行氢化硅烷化反应形成烷基化多孔硅,利用扫描电子显微镜、红外光谱仪、荧光光谱仪等表征烷基化多孔硅的形态、组成、光致发光、耐碱性等.结果表明,新鲜多孔硅表面呈微米级长方形块状结构,含大量Si—Hx(x=1,2,3)键,而氢化硅烷化反应后其表面则变为岛状结构,且出现与烷基有关的C—H键伸缩振动峰;延长氢化硅烷化反应时间,所得多孔硅光致发光峰值强度增加,峰位蓝移,耐碱性有明显提高.

The alkylated porous silicon is prepared by light-promoted hydrosilylation reaction between 1-dodecene and the freshly porous silicon formed by electrochemical anodization of p-type single crystal silicon wafer in HF/C2H5OH electrolytes. By means of scanning electron microscopy, infrared spectroscopy, fluorescence spectroscopy etc. , the properties of alkylated porous silicon are evaluated such as morphology, chemical composition, photoluminescence, anti-corrosion performance in alkaline medium. The result shows that the surface of freshly porous silicon is covered by a lot of rectangle pieces equably, and a lot of silicon hydride （ Si--Hx, x = 1,2, 3） resides present its surface. After hydrosilylation reaction, these rectangle pieces become island shape structure, and partial Si--H, band is substituted by Si--C band. By increasing the time of hydrosilylation reaction, the photoluminescence of alkylated porous silicon is strengthened, the corresponding photoluminescence peak is blue shift, and anti-corrosion performance in alkaline medium is also improved obviously.