脉冲总剂量效应测试技术及其损伤规律研究

Pulsed total dose effect test technique and damage laws study

建立了基于PCI插卡式虚拟仪器的脉冲总剂量效应在线测试系统,详细说明了其工作原理和技术指标。利用该系统研究了脉冲辐照后CMOS器件总剂量损伤以及时间关联的退火响应,包括不同栅偏压对总剂量损伤和退火行为的影响,以及氧化物陷阱电荷、界面陷阱电荷引起的阈值电压漂移与退火时间的关联情况,并从物理机理上进行了详细的分析。

A pulsed total dose effect in-circuit test system based on PCI card virtual instrument was developed. Working principle and technical specifications were introduced in detail. Pulsed total dose damage and time-dependent annealing response on CMOS devices were studied by utilizing this system, including influence of different gate bias voltage on total damage and annealing behavior, as well as threshold voltage shift due to oxide trap charge and interface trap charge versus annealing time. Physical mechanism was discussed in detail.