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Cr_2O_3掺杂Pb(Mn_(1/3)Sb_(2/3))_(0.05)Zr_(0.47)Ti_(0.48)O_3压电陶瓷的性质(英文) 被引量:1

PROPERTIES OF Cr_(2)O_(3)-MODIFIED Pb(Mn_(1/3)Sb_(2/3))_(0.05)Zr_(0.47)Ti_(0.48)O_(3) CERAMICS
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摘要 探讨了Cr2O3掺杂对锑锰锆钛酸铅Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3(简称PMSZT)压电陶瓷性能影响.通过X射线衍射,电子顺磁共振以及扫描电镜分析了PMSZT+z Cr2O3(z=0.2%~0.8%,质量分数)陶瓷的相组成,元素价态以及显微结构.结果表明:合成温度900℃保温2 h后,可以得到钙钛矿结构.随着Cr2O3掺杂量的增大,四方相的含量减少,准同相界向三方相移动.掺杂Cr2O3的质量分数为0.6%时:相对介电常数εr=1 650,介电损耗tanδ=0.006,压电常数d33=328 pC/N,机电耦合系数Kp=0.63,机械品质因数Qm=2 300,电性能优于Cr2O3掺杂量为0.2%,0.4%,0.8%的样品,但比未掺杂时的稍差.随着Cr2O3掺杂量的增加,PMSZT陶瓷的Curie温度降低,谐振频率变化率随温度变化由正变负. The effects of Cr2O3 doping on the properties of lead antimony-manganese zirconate titanate Pb(Mn1/3 Sb2/3 )0.05 Zr0.47 ·Ti0.48 O3 (PMSZT) ceramics were studied. The crystallographic phase, element valence and microstructure of PMSZT+zCr2O3 (z=0.2%-0.8000 in mass) ceramics were investigated by means of X-ray diffraction, electron paramagnetic resonance and scanning electron microscopy. The results show that a pure perovskite structure is obtained after synthesis at 900 ℃ for 2 h.With the increase of Cr content the number of rhombohedral phases increases, and the morphotropic phase boundary correspondingly shifts to a rhombohedral phase. A ceramic with a relative dielectric constant εr of 1 650, a dielectric loss tanδ of 0. 006, a piezoelectric constant d33 of 328 pC/N, a planar coupling factor Kp of 0.63 and a mechanical quality factor Qm of 2 300 are obtained when the amount of Cr2O3 added is 0.6% in mass. This ceramic exhibits more excellent electric properties than other compositions doped with 0.2%, 0.4%, 0.8% of Cr2O3 in mass, but which have lower properties than the undoped ceramic. When the amount of added Cr2O3 is increased, the Curie temperature moves towards low temperatures, and the changes of resonance frequency change from positive to negative with the increase in temperature.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2005年第9期1060-1064,共5页 Journal of The Chinese Ceramic Society
基金 国家自然基金重点基金项目(10232030) 天津大学先进陶瓷与加工技术教育部重点实验室(x06050)资助项目
关键词 锑锰锆钛酸铅压电陶瓷 相组成 元素价态 显微结构 电性能 Antimony Ceramic materials Chromium compounds Doping (additives) Lead Manganese Microstructure Piezoelectric materials Titanium compounds Zirconium compounds
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