PSD光电位置传感器的实现及SOI结构研究

Realization of Opto-Electric Position Sensitive Device(PSD) and Research on SOI Structure

分析了高灵敏度光电位置传感器(PSD)的设计和工艺制作过程,给出了器件制作工艺流程.对制作的器件进行了参数测试,测试结果为:响应波长为600～1200nm,峰值响应波长为760nm,位置分辨能力为5 μm,位置探测误差为±50 μm,暗电流为1.4×10-10A(VR=-5 V),峰值灵敏度为0.8634 A/W.同时为提高器件的响应速度,提出了基于SOI技术的PSD器件结构.

In this paper,the design and fabrication of opto-electric position sensitive device （PSD） were introduced and analyzed,and the process flow and the process description are given. The typical photoelectric parameters of manu-factured devices were measured. Results indicate that the photo-response range is 600-1200 nm;the peak response wavelength reaches 760 nm;the positioning resolution reaches 5 μm;the error of measuring position is no more than ±50μm;the dark current is no more than 1.4×10^- 10A（VR =-5 V）;and the peak value sensitivity is 0. 8634 A/W. Also ,the PSD device ed in order to improve the response speed of structures based on SOI technology were suggestsensitive devices.