双极晶体管高温辐照的剂量率效应研究

An Investigation into Dose-Rate Effect of Bipolar Junction Transistors at Elevated Temperature Irradiation

文章对一种具有低剂量率辐射损伤增强效应的国产双极晶体管进行了不同剂量率、不同温度下的电离辐照试验。结果表明,室温辐照条件下,该双极器件在较高剂量率下的辐射损伤没有显著区别,但在低剂量率辐照下,辐射损伤明显增加;而在高温辐照条件下,即使辐照剂量率较高,其辐射损伤也有显著的差异。最后,讨论了这种效应可能的内在机制。

A series of elevated temperature irradiation experiments are made on domestic NPN and PNP transistors sensitive to enhanced low dose rate damage, Results have shown that the radiation damage of the transistors has little difference at room temperature with higher dose rate irradiation. Only irradiated at much lower dose-rate, does the radiation damage of the transistors increase significantly. However, while irradiated at elevated temperatures, even the irradiation dose-rate is higher, the radiation damage of the transistor has marked difference. Possible mechanism for this effect is discussed.