摘要
研究了在10 keV X射线辐照情况下,MOS器件的阈值电压随总剂量和剂量率的改变而变化的趋势。实验结果表明,辐照后,与用Co60作为辐射源辐照所做实验结果明显不同的是,NMOS器件的阈值电压漂移幅度远大于PMOS器件的漂移幅度。文中对这种现象进行了讨论。
Effects of total close and dose rates on threshold voltage of MOS devices in 10 keV X-ray environment are analyzed in this paper. Results show that, after radiation, the threshold voltage drift of NMOS transistors is larget than that of PMOS devices, which is different from the experimental results in the Co^60 radiation environment. Explanations for this phenomenon are also given.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第5期497-500,共4页
Microelectronics
基金
电子元器件可靠性物理及其应用技术国家重点实验室基金资助项目(51433030404DZ1501)
