摘要
设计了一种与标准CMOS工艺兼容的低压带隙电压基准源,该电路应用二阶曲率补偿,以及两级运算放大器,采用0.8 μm BSIM3v3 CMOS工艺,其中,Vthn＝0.85 V,Vthp＝-0.95 V.用Cadence Spectre软件仿真得出:最小电源电压1.8 V,输出电压590 mV,在0～100 ℃范围内,温度系数(TC)可达15 ppm /℃,在27 ℃时输出电压变化率为±2.95 mV/V.博士研究生,副教授,主要从事功率集成电路设计和电力电子技术应用研究与教学工作.
A low-voltage bandgap voltage reference, which is compatible with standard CMOS process, is proposed in the paper. The circuit adopts 2nd-order curvature compensation and contains a tow-stage op-amp. And it is implemented in a stanard 0. 8-μm BSIM3v3 CMOS technology, with Vthn =0.85 V, Vthp =-0.95 V,at 0 ℃. Simulation with Cadence Spectre shows that the proposed bandgap voltage reference can operate at a minimum supply voltage of 1.8 V, and the voltage reference output is 590 mV. Within the temperature range from 0 ℃ to 100 ℃,a temperature coefficient of 15 ppm/℃ is achieved, and the line regulation at 27 ℃ is 4±2.95 mV/V.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第5期542-544,548,共4页
Microelectronics
关键词
CMOS
带隙电压基准源
低压
温度系数
CMOS
Band-gap voltage reference
Low-voltage
Temperature coefficient
