摘要
介绍了一种采用0.6μm CM O S工艺实现的256单元光电管阵列四象限CM O S光电传感器。该传感器由16×16单元有源光电管阵列,相关二次采样电路,差分放大电路和数字控制电路组成。每个有源光电管单元的尺寸为60μm×60μm,其感光面积百分比为64.5%,制造工艺与CM O S工艺兼容,实现了象限传感器与后端信号处理电路的单片化集成。通过变频二次采样的工作方式,该传感器的感光动态范围可扩大到84 dB。
A 0.6μm CMOS 256 cells arrayed 4 quadrants CMOS photoelectric sensor was designed and fabricated. It consists 16× 16 active photodiodes array, correlated double sampling (CDS) circuits, differential amplified circuits and digital control circuits. The size of every active photodiode is 60 μm × 60 μm and its fill factor is 64. 5 %. The fabricating processes are compatible with traditional CMOS processes, thus realize the single chip integration of the quadrants sensor and the subsequent signal processing circuits. By using reset frequency adjustment and double scanning method, the total dynamic range of the sensor can be enlarged to 84 dB.
出处
《压电与声光》
CSCD
北大核心
2005年第5期479-482,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(90307009)