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256单元光电管阵列四象限CMOS传感器研究

Research on 256 Photodiodes Arrayed Four Quadrants CMOS Sensor
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摘要 介绍了一种采用0.6μm CM O S工艺实现的256单元光电管阵列四象限CM O S光电传感器。该传感器由16×16单元有源光电管阵列,相关二次采样电路,差分放大电路和数字控制电路组成。每个有源光电管单元的尺寸为60μm×60μm,其感光面积百分比为64.5%,制造工艺与CM O S工艺兼容,实现了象限传感器与后端信号处理电路的单片化集成。通过变频二次采样的工作方式,该传感器的感光动态范围可扩大到84 dB。 A 0.6μm CMOS 256 cells arrayed 4 quadrants CMOS photoelectric sensor was designed and fabricated. It consists 16× 16 active photodiodes array, correlated double sampling （CDS） circuits, differential amplified circuits and digital control circuits. The size of every active photodiode is 60 μm × 60 μm and its fill factor is 64. 5 %. The fabricating processes are compatible with traditional CMOS processes, thus realize the single chip integration of the quadrants sensor and the subsequent signal processing circuits. By using reset frequency adjustment and double scanning method, the total dynamic range of the sensor can be enlarged to 84 dB.
作者 周鑫 朱大中
机构地区 浙江大学信息科学与工程学院信息与电子工程学系
出处 《压电与声光》 CSCD 北大核心 2005年第5期479-482,共4页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(90307009)
关键词 CMOS集成电路 256阵列四象限光电传感器 相关二次采样 CMOS IC 256 cells arrayed four quadrants photoelectric sensor correlated double sampling（CDS）
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献6

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  • 4XU Chen, ZHANG Wei-quan, CHAN Man-sun. Low voltage hybrid bulk/SOI CMOS active pixel image sensor [J]. IEEE Electron Devices, 2001,22 (5):248-250
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二级参考文献10

  • 1Nixon R H,Kemeny S E,Pain B. et al. 256X 256 CMOS active pixel sensor[J]. IEEE Trans Electron Devices.2000;47(1):55-64.
  • 2Chen Xu.Zhang Weiquan. Mansun Chan. Low Voltage hybrid bulk/SOI CMOS active pixel image sensor[J]. IEEE Electron Devices. 2001 ; 22(5 ) : 248- 250.
  • 3Mendis S K,Kemeny S E,Gee R C. et al. CMOS active pixel image sensors for highly integrated imaging system. IEEE Journal of Solid-State Circuits, 1997; 32(2) :187-197.
  • 4Bermak A, Bouzerdoum A, Eshraghian K. A high fill factor native logarithmic pixel: simulation, design and layout optimization [A]. ISCAS 2000. IEEE International Symposium on Circuits and Systems[C]. 2000. 5(5) :293-296.
  • 5Smith L D,Farmer H R.Kunesh M.et al. A CMOS based analog standard cell product family [J]. IEEE Journal of Solid-State Circuits, 1989 ; 24(4 ) : 370- 379.
  • 6Mendis S K,Kemeny S E,Gee R C. et al. CMOS active pixel image sensors for highly integrated imaging system. IEEE Journal of Solid-State Circuits, 1997; 32(2) :187-197
  • 7Bermak A, Bouzerdoum A, Eshraghian K. A high fill factor native logarithmic pixel:simulation, design and layout optimization [A ]. ISCAS 2000, IEEE International Symposium on Circuits and Systems [C]. 2000:5(5) :293～296
  • 8Smith L D,Farmer H R,Kunesh M,et al. A CMOS based analog standard cell product family [J]. IEEE Journal of Solid-State Circuits, 1989; 24(4 ): 370- 379
  • 9Nixon R H,Kemeny S E,Pain B. et al. 256 × 256 CMOS active pixel sensor[J]. IEEE Trans Electron Devices,2000;47(1) :55-64
  • 10Chen Xu,Zhang Weiquan,Mansun Chan. Low Voltage hybrid bulk/SOI CMOS active pixel image sensor[J].IEEE Electron Devices, 2001; 22(5): 248- 250

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压电与声光
2005年 第5期

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