铁电薄膜Bi_(3.2)Nd_(0.8)Ti_3O_(12)的制备及其特性的研究

Studies of the Preparation and Characterization of Bi_(3.2)Nd_(0.8)Ti_3O_(12) Ferroelectric Thin Films

用脉冲激光淀积法成功地在p-S i底片上制备了高c轴取向的B i3.20N d0.80T i3O12铁电薄膜,研究了薄膜的铁电性能及疲劳特性。研究表明,用钕N d替代B i的B i3.20N d0.80T i3O12薄膜具有较好电滞回线(P-E),在应用电压为10 V,测试频率为1MH z下,其剩余极化(Pr)及矫顽场(Ec)分别达到27μC/cm2和70 kV/cm。更为重要的是,A u/B i3.20N d0.80T i3O12/p-S i(100)电容在读/写开关次数达到1010后仍表现出较好的抗疲劳特性。

Highly c-axis oriented neodymium-modified bismuth titanate （Bi3.2Nd0.8Ti3O12） were successfully grown on p-SiO2 substrates by pulsed excimer laser deposition. The ferroelectric properties and fatigue characteristic of Bi3.2Nd0.8Ti3O12 thin films were investigated. The results show that the neodymium-modified bismuth titanate （Bi3.2Nd0.8Ti3O12） films exhibited well-saturated polarization-electric field （P-E） switching curves with the remanent polarization （Pr） of 27 μC/cm^2 and the coercive field （Ec） of 70 kV/cm at an applied voltage of 10 V. More importantly, the Au/ Bi3.2Nd0.8Ti3O12/p-Si（100） capacitor exhibited fatigue-free behavior up to 10^10 read/ write switching cycles at a frequency of 1 MHz.