Yb:GdYAl_3(BO_3)_4晶体的生长及性质研究

Study on Growth and Spectral Properties of Yb:GdYAl_3(BO_3)_4 Crystal

采用助熔剂法生长了Y b:G dYA l3(BO3)4晶体。测量了晶体的室温吸收谱和荧光谱。该晶体在960 nm和974 nm处存在两个吸收带,适合InG aA s泵浦;在1 002 nm和1 044 nm处各存在一荧光谱峰。研究了晶体的热学性质,平行于c轴方向的热膨胀系数约为a轴方向的5.4倍。采用化学腐蚀光学显微法研究晶体缺陷证明Y b:G dYA l3(BO3)4中存在孪晶结构。

Single crystal of Yb：GdYAl3（BO3）4 （Yb ： GdYAB） has been grown by the flux method. The transmittance spectrum and fluorescence spectrum of Yb^3＋：GdYAl3（BO3）4 crystal are measured at room temperature. In the absorption spectra, there are two absorption bands at 960 nm and 974 nm respectively, which is suitable for InGaAs diode laser pumping. In the fluorescence spectra, there are two fluorescence peaks at 1 002 nm and 1 044 nm. The thermal properties of Yb ：GdYAl3（BO3）4 crystal have been studied for the first time. The thermal expansion coefficient along c-axis is almost 5.4 times larger than that along α-axis.