摘要
采用自行设计的热封闭系统对808nmInGaAsP单量子阱激光器激射波长的温度依赖性进行了实验研究.用恒定电流下增益峰波长的温漂系数a1和恒定温度下增益峰波长随注入电流的漂移系数a2来表征激射波长的温度依赖性.实验表明,激射波长的漂移系数dλ/dT是特征温度T0的函数.T0越高,激射波长的温度依赖性越大.特征温度T0与透明电流Itr下的特征温度TItr相等时,激射波长的漂移系数dλ/dT达到最大值,该值由发热诱使带隙窄化dλg/dT决定.解决高特征温度T0与小的dλ/dT矛盾的一种可能是考虑温度不依赖的漏电流.
The temperature dependence of lasing wavelength in 808nm InGaAsP SQW lasers is investigated in a heat-tight system. Temperature dependence of lasing wavelength can be characterized by considering two coefficients a1 and a2 ： the gain peak wavelength shift coefficients both under the constant current condition and the constant temperature condition, respectively. It is shown that the lasing wavelength shift coefficient dλ/dT is a function of the characteristic temperature To. When the To is equal to the characteristic temperature Tltr of the transparency current Itr, the dλ/dT takes the maximum value which is determined by the thermal-induced bandgap narrowing effect dλg/dT. One possibility to solve the paradox between a high To and the small temperature dependence of lasing wavelength is to consider the temperature-independent leakage current.
