硅衬底GaN基LED的研究进展

Development of GaN-based LED Grown on Si Substrate

与蓝宝石衬底相比,硅衬底具有低成本、大面积、高质量、导电导热性能好等优点,普遍认为使用Si片作GaN薄膜衬底有可能实现光电子和微电子的集成,因此Si基GaN的研究受到了广泛关注。本文回顾了Si衬底GaN基LED的研究进展,同时简要介绍了在Si衬底上制备GaN基LED的实验结果,及研制出工作电压为3.6 V、串联电阻为31Ω、输出功率近1 mW的Si衬底GaN基蓝光LED。

Si substrate is a very attractive alternative for GaN film due to its low cost, large size, high quality, well-conducting and the possibility of the integration of optoelectronics or high power electronics with Si-based electronics. The article gives a review on the latest developments in GaN-based LED grown on Si substrate. Additionally, the experimental results of the GaN based LED grown on Si （111） substrate is given, the forward operating voltage of the LED is 3.6 V at 20 mA, the series resistance is 31Ω and its output power is about 1 mW.