BaMoO_4薄膜电化学制备适宜的工艺条件

Optimization of the Process Conditions for Electrochemical Deposition of BaMoO_4 Thin Film

为研究BaMoO4薄膜的电化学成膜机制,寻求适宜的制备工艺条件,采用恒电流沉积技术直接在高纯金属钼片上制备了白钨矿结构的BaMoO4薄膜。借助XRD、SEM、XPS等分析技术研究了温度和电流密度等工艺条件对制备的BaMoO4薄膜的影响。结果表明,制备的BaMoO4薄膜为四方单相结构,室温、相对较低的电流密度条件下制备的BaMoO4薄膜表面更均匀、致密。适宜的电化学制备BaMoO4薄膜的工艺条件为:室温,电流密度为0.3mA/cm2,溶液pH值为13,反应时间为1h。

BaMoO_ 4 thin film with scheelite structure was prepared on highly pure molybdenum substrate by galvanostatic deposition, which was aiming at revealing the electrochemical mechanism and establishing suitable process conditions of the BaMoO_ 4 thin film. Thus the influences of temperature and current density on the structure of the as-deposited BaMoO_ 4 film were studied using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy. Results indicated that the as-deposited BaMoO_ 4 thin film was composed of single tetragonal phase. The BaMoO_ 4 film deposited at room temperature and low current density had better uniformity and compactness than the one deposited at higher temperature and current density. The optimized parameters for the electrochemical deposition of the BaMoO_ 4 film were recommended as room temperature about 20 ℃, current density of 0.3 mA/cm2, electrolyte pH value of 13 and electrochemical treatment duration of 1 h.