硅片自旋转磨削的运动几何学分析

Analysis of Kinematic Geometry on Wafer Rotation Grinding Processes

介绍了硅片自旋转磨削的原理,通过引入节点、节圆概念建立了硅片自旋转磨削的运动学模型,通过分析砂轮与硅片之间的相对运动给出了硅片自旋转磨削的运动轨迹参数方程。在运动学的基础上推导了磨纹长度、磨纹数量以及磨削稳定周期公式。分析了磨纹间距、磨纹密度与磨削表面质量的关系。给出了选定磨削条件下的计算实例。研究结果为提高硅片加工质量及合理选择磨削工艺参数提供了理论依据。

The principle of wafer rotation grinding process was introduced. According to relative motion between cup grinding wheel and silicon wafer, a kinematic model of wafer rotation grinding was established, the kinematic trajectory equation of grit was derived based on the concept of pitch points and pitch circles. The length of trajectory, the number of grinding marks and the stable grinding period were deduced. The influences of interval and density of grinding marks on grinding surface quality were theoretically analyzed. A calculating illustration under selected grinding condition was given. The research results are available to select the proper parameters of grinding process and to im- prove the surface quality.