在Be和Au中^7Be半衰期差别的测量

Measurement of Difference of Half-Life of 7Be in Be and Au

用两套γ谱仪精确测量了注入到天然铍和天然金中的7Be发生电子俘获的半衰期。实验测得,天然铍中7Be的半衰期为53.275(25)d,在天然金中为53.270(19)d。在0.12%的实验测量精度下,未观测到7Be半衰期在这两种材料中的差异。结果表明:注入在不同材料中7Be半衰期的变化不能仅从被注入材料的电子亲合势的差异考虑,还要考虑材料晶格结构的影响。

The half-life T1/2 of ^7Be implanted in natural beryllium and natural gold has been measured using two coaxial high-purity germanium detectors to be 53. 275 （25） d and 53. 270（19） d, respectively. No difference in the half-life of ^7Be in the host media beryllium and gold is observed within measurement uncertainty of 0.12%. This result implies that the change of the decay rate of ^7Be implanted in different materials can not be simply expected from the electron affinity difference consideration alone and the lattice structure of the host materials should be taken into account.