激光化学诱导液相腐蚀新方法

New method of laser induced wet-chemical etching

提出了一种激光诱导液相腐蚀新方法——抗蚀膜掩蔽法。抗蚀膜掩蔽法是指在激光腐蚀中,用抗蚀膜来实现对激光腐蚀区域的控制。理论分析和实验结果都表明,抗蚀膜掩蔽法可以有效地控制激光化学腐蚀的图像形状;因不需要对激光光束进行聚焦,光传播垂直于基片表面,制作出的腐蚀孔侧壁可以具有很高的垂直度;利用激光光束中心区域能量分布近似均匀的特点,使小面积腐蚀区域的腐蚀速率近似相等,腐蚀面内各点没有明显的高度差。因为以上优点,抗蚀膜掩蔽法能克服现有激光腐蚀方法的诸多弊端,简化激光腐蚀工艺,在特殊结构光电器件和光电集成中具有广泛的应用前景。

A new method -- laser-assisted wet mask-etching is proposed. This method can control the etching area with resistant film masking. Both theoretical analysis and experimental results show that the image shape formed by laser chemical etching can be effectively controlled by resistant film masking and highly steep side walls can be obtained in deep etched holes because the laser propagates normally to the surface of semiconductor substrates without spreading and nearly homogeneous power density in the center of laser beam, thus the etching rate in the etching area is approximately the same, the etched area has no significant elevation difference. Since the resistant film masking method has the abovementioned advantages, many faults of current laser etching method can be overcome and laser etching process can be simplified. This method has a broad application prospect in manufacturing specialstructured opto-electronic devices and opto-electronic integration.