摘要
设计并实现了一种bipolar工艺下的高精度带隙基准电路,通过Hspice验证,具有2.28×10-6K-1的温度系数,在?V=10V的宽电源电压幅度范围作用下,具有1.2mV/V电源抑制特性及直流PSRR=79dB的高电源抑制比。
A bandgap reference based on bipolar technology is presented. Simulated with Hspice, it possesses a temperature coefficient of 2.28×10^-6K^-1. Under the condition of△V=10V wide input voltage range, it possesses the power supply rejected characteristic of 1.2mV/V and high DC PSRR of 79dB.
出处
《电路与系统学报》
CSCD
北大核心
2005年第5期125-128,共4页
Journal of Circuits and Systems
关键词
带隙基准源
温度系数
电源抑制比
bandgap reference
temperature coefficient
power supply rejected ratio