摘要
利用红外椭偏光谱法(IRSE)对生长在蓝宝石衬底上的非故意掺杂的GaN外延膜进行了研究。通过对椭偏光谱的理论计算,拟合了本征GaN中的声子振动参量和等离子振荡的频率及阻尼常量,并由此得到了各向异性的折射率和消光系数的色散曲线以及载流子浓度和迁移率。将得到的电学参数同霍耳测量结果进行了比较。
Infrared spectroscopic ellipsometry from 9.5 to 12.5μm is used to study the nominally undoped GaN on sapphire. The parameters of the lattice vibration oscillators and the plasma are obtained by fitting with the experimental data. Then the anisotropic refractive index is calculated. Further-more, the carrier concentration and the electron mobility from the plasma frequency and the damping constant are derived. The result is compared with that of the Hall measurement.
出处
《红外与激光工程》
EI
CSCD
北大核心
2005年第5期544-547,共4页
Infrared and Laser Engineering
关键词
氮化镓
红外椭偏光谱
折射率
载流子浓度
迁移率
GaN
Infrared spectroscopic ellipsometry（IRSE）
Refractive index
Cartier concentration
Electron mobility
