摘要
通过计算机模拟运算,分析了低浓度短基区、缓变杂质分布阻断结和临界长基区等优化设计方案,最大限度地对阻断电压、通态压降和关断时间等矛盾参数进行了协调,成功地研制了Φ1002800V,3500A快速晶闸管。
This paper describes optimum design and manufacture of the most powerful fast switching thyristors in the world. By computer simulation,a low concentration profile in space charging region, slow gradient for blocking junction and critical narrow-base structure are formed. Tested parameters of the devices produced show the best compromise of blocking-voltage, on-state voltage drop and turn-off time.
出处
《电力电子技术》
CSCD
北大核心
2005年第5期133-134,共2页
Power Electronics
关键词
晶闸管
设计
研制/阻断电压
thyristor
design
development / blocking voltage
